inchange semiconductor isc product specification isc silicon npn power transistors BDT31F/af/bf/cf/df description dc current gain -h fe = 25(min)@ i c = 1.0a collector-emitter sustaining voltage- : v ceo(sus) = 40v(min)- BDT31F; 60v(min)- bdt31af 80v(min)- bdt31bf; 100v(min)- bdt31cf 120v(min)- bdt31df complement to type bdt32f/af/bf/cf/df applications designed for use in audio amplifier output stages , general purpose amplifier and high s peed switching applications absolute maximum rating s (t a =25 ) symbol parameter value unit BDT31F 80 bdt31af 100 bdt31bf 120 bdt31cf 140 v cbo collector-base voltage bdt31df 160 v BDT31F 40 bdt31af 60 bdt31bf 80 bdt31cf 100 v ceo collector-emitter voltage bdt31df 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a i cm collector current-peak 5 a i b b base current 1 a p c collector power dissipation t c =25 22 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.12 /w r th j-a thermal resistance,junction to ambient 55 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors BDT31F/af/bf/cf/df electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDT31F 40 bdt31af 60 bdt31bf 80 bdt31cf 100 v ceo(sus) collector-emitter sustaining voltage bdt31df i c = 30ma; i b = 0 120 v BDT31F/af/bf/cf i c = 3a; i b = 0.375a b 1.2 v ce(sat) collector-emitter saturation voltage bdt31df i c = 3a; i b = 0.75a b 2.5 v v be(on) base-emitter on voltage i c = 3a ; v ce = 4v 1.8 v i ces collector cutoff current v ce = v ceomax ; v be = 0 0.2 ma BDT31F/af v ce = 30v; i b = 0 b bdt31bf/cf v ce = 60v; i b = 0 b i ceo collector cutoff current bdt31df v ce = 90v; i b = 0 b 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.2 ma h fe-1 dc current gain i c =1a ; v ce = 4v 25 BDT31F/af/bf/cf 10 50 h fe-2 dc current gain bdt31df i c = 3a ; v ce = 4v 5 f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v 3 mhz switching times t on turn-on time 0.3 s t off turn-off time i c = 1.0a; i b1 = -i b2 = 0.1a 1.0 s isc website www.iscsemi.cn
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